Pyrolytic Boron Nitride Ceramics
PBN is the ideal choice for furnace, electrical, microwave, and semiconductor components.
PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardised crucibles for gallium arsenide crystal (GAN) production.
PBN will not react with acids, alkalis, organic solvents, molten metals, or Graphite. Bulk impurity levels are less than 100 parts per million with metallic impurities less than 10 parts per million. It withstands 1800° C in vacuum and 2000° C in Nitrogen, showing no melting point, making it an excellent choice for furnace components, and melting vessels. Crucibles heated to 1200°C can be plunged into liquid nitrogen without visible damage. PBN-coated graphite heating elements provide extremely uniform temperature profiles for both compound and silicon semiconductor manufacturing.
Main characteristic of the PBN
- Hexagonal layered structure
- Good thermal conductivity
- High insulation resistance
- High dielectric strength over wide temperature ranges
- Anisotropic physical properties
- High working temperature (>1500゜C)
- High electrical resistivity (>1015 W-cm)
- High dielectric strength
- Low outgassing at elevated temperature
- Non-reactive to most other compounds
- Withstands high temperatures and rapid cooling
- High purity (>99.99%)